Si1050X

The Si1050X is designed as one kind of N-Channel 8 V (D-S) MOSFET device that can be used in wide range of applications such as load switch for portable devices. And the benefits of this device are:(1)ease in driving switches; (2)low offset (error) voltage; (3)low-voltage operation; (4)high-speed circuits; (5)low battery voltage operation.

Features of the Si1050X are:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested; (4)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the Si1050X can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 8 V;(3)Continuous Drain Current (TJ = 150 °C): 1.32 or 1.05 A;(4)Pulsed Drain Current: 6 A;(5)Continuous Source-Drain Diode Current: 0.20 A;(6)Maximum Power Dissipation: 0.236 W or 0.151 W;(7)Operating Junction and Storage Temperature Range: -55 to 150 °C;(8)Gate-Source ESD Rating (HBM, Method 3015): 2000 V. If you want to know more information about the Si1050X, please download the datasheet in www.seekic.com or www.chinaicmart.com .