Features: · TrenchFET® Power MOSFETS: 1.8-V Rated· ESD Protected: 2000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 ...
Si1410EDH: Features: · TrenchFET® Power MOSFETS: 1.8-V Rated· ESD Protected: 2000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchSpecifications Parameter Symbo...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 3.7 | 2.9 | mA |
| TA = 85 | 2.6 | 2.0 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.4 | 0.9 | ||
| Pulsed Drain Current | IDM | 8 | |||
| Maximum Power Dissipationa | TA = 25 | PD | 1.56 | 1.0 | mW |
| TA = 85 | 0.81 | 0.52 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||