Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 3000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8...
Si1413EDH: Features: · TrenchFET Power MOSFETS: 1.8-V Rated· ESD Protected: 3000 V· Thermally Enhanced SC-70 PackageApplication· Load Switching· PA Switch· Level SwitchPinoutSpecifications Parameter Sym...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -20 | V | ||
| Gate-Source Voltage | VGS | ±8 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -2.9 | -2.3 | mA |
| TA = 85 | -2.0 | -1.6 | |||
| Continuous Source Current (Diode Conduction)a | IS | -1.4 | -0.9 | ||
| Pulsed Drain Current | IDM | -8 | |||
| Maximum Power Dissipationa | TA = 25 | PD | 1.56 | 1.0 | mW |
| TA = 85 | 0.81 | 0.52 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||