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Si1555DL

Specifications Parameter Symbol N-Channel P-Channel Unit 5 secs Steady State 5 secs Steady State Drain-Source Voltage VDS 20 −20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID ±0.70 ±0.66 -1.00 -0.88 A TA = 85 ±0.50...

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Si1555DL: Specifications Parameter Symbol N-Channel P-Channel Unit 5 secs Steady State 5 secs Steady State Drain-Source Voltage VDS 20 −20 V Gate-Source Voltage VGS ±12 ±12 ...

Si1555DL Data Sheet

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Part Number:
Si1555DL
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter Symbol N-Channel P-Channel Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 20 −20 V
Gate-Source Voltage VGS ±12 ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID ±0.70 ±0.66 -1.00 -0.88 A
TA = 85 ±0.50 ±0.48 -0.72 -0.63
Continuous Source Current (Diode Conduction)a IS 0.25 0.23 -0.25 -0.23
Pulsed Drain Current IDM 4.0 -3.0
Maximum Power Dissipationa TA = 25 PD 0.30 0.27 0.30 0.27 W
TA = 85 0.16 0.14 0.16 0.14
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150





Description

Si1555DL Complementary Low Threshold MOSFET Pair




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