Features: ` 215-m Low rDS(on) TrenchFET` 1.8 to 8-V Input` 1.5 to 8-V Logic Level Control` Low Profile, Small Footprint SC70-6 Package` 2000-V ESD Protection On Input Switch, VON/OFF` Adjustable Slew-RateApplicationThe Si1865DL is ideally suited for high-side load switching in portable applicatio...
Si1865DL: Features: ` 215-m Low rDS(on) TrenchFET` 1.8 to 8-V Input` 1.5 to 8-V Logic Level Control` Low Profile, Small Footprint SC70-6 Package` 2000-V ESD Protection On Input Switch, VON/OFF` Adjustable Sl...
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The Si1865DL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types.

| Parameter | Symbol | Limit | Unit | |
| Input Voltage | VIN | 8 | V | |
| ON/OFF Voltage | VON/OFF | 8 | ||
| Load Current | Continuousa, b | IL | ±1.2 | A |
| Pulsedb, c | ±3 | |||
| Continuous Intrinsic Diode Conductiona | IS | -0.4 | ||
| Maximum Power Dissipationa | PD | 0.4 | W | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500) | ESD | 2 | kV | |
The Si1865DL includes a p- and n-channel MOSFET in a single SC70-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel,with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si1865DL operates on supply lines from 1.8 to 8 V, and can drive loads up to 1.2 A.