Features: ` Performs all BORSCHT functions` Ideal for applications up to 18 kft` Internal balanced ringing to 65 Vrms (Si3220)` External bulk ringer support (Si3225)` Software-programmable parameters:` Ringing frequency, amplitude, cadenc...
Si3220: Features: ` Performs all BORSCHT functions` Ideal for applications up to 18 kft` Internal balanced ringing to 65 Vrms (Si3220)` External bulk ringer support (...
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| Parameter | Symbol | Test Condition |
Value | Unit |
| Supply Voltage, Si3200 and Si3220/Si3225 | VDD, VDD1VDD4 | 0.5 to 6.0 | V | |
| High Battery Supply Voltage, Si32002 | VBATH | Continuous | 0.4 to 104 | V |
| 10 ms | 0.4 to 109 | |||
| Low Battery Supply Voltage, Si3200 | VBAT,VBATL | Continuous | VBATH | V |
| TIP or RING Voltage, Si3205 | VTIP,VRING | Continuous Pulse < 10 s Pulse < 4 s |
104 VBATH 15 VBATH 35 |
|
| TIP, RING Current, Si3200 | ITIP, IRING | ±100 | mA | |
| STIPAC, STIPDC, SRINGAC, SRINGDC Current, Si3220/Si3225 |
±20 | mA | ||
| Input Current, Digital Input Pins | IIN | Continuous | ±10 | mA |
| Si3220/25 Analog Ground Differential Voltage (GND1 to ePad, GND2 to ePad, or GND1 to GND2)3 |
VGNDA | ±50 | mV | |
| Si3220/25 Digital Ground Differential Voltage (GND3 to GND4)3 |
VGNDD | ±50 | mV | |
| Si3220/25 Analog to Digital Ground Differential Voltage (GND1/GND2/ePad to GND3/GND4)3 |
VGND,AD | ±200 | mV | |
| Digital Input Voltage | VIND | 0.3 to (VDDD + 0.3) | V | |
| Operating Temperature Range | TA | 40 to 100 | °C | |
| Storage Temperature Range | TSTG | 40 to 150 | °C | |
| Si3220/Si3225 Thermal Resistance, Typical3 (TQFP-64 ePad) |
JA | 25 | °C/W | |
| Si3200 Thermal Resistance, Typical4 (SOIC-16 ePad) |
JA | 55 | °C/W | |
| Continuous Power Dissipation, Si32005 | PD | TA = 85 °C, SOIC-16 |
1 | W |
| Continuous Power Dissipation, Si3220/25 | PD | TA = 85 °C, TQFP-64 |
1.6 | W |
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2. The dv/dt of the voltage applied to the VBAT, VBATH, and VBATL pins must be limited to 10 V/s.
3. The PCB pad placed under the device package must be connected with multiple vias to the PCB ground layer and to the GND1-GND4 pins via short traces. The TQFP-64 e-Pad must be properly soldered to the PCB pad during PCB assembly. This type of low-impedance grounding arrangement is necessary to ensure that maximum differentials are not exceeded under any operating condition in addition to providing thermal dissipation.
4. The thermal resistance of an exposed pad package is assured when the recommended printed circuit board layout
guidelines are followed correctly. The specified performance requires that the exposed pad be soldered to an xposed copper surface of equal size and that multiple vias are added to enable heat transfer between the top-side copper surface and a large internal copper ground plane. Refer to "AN55: Dual ProSLIC® User Guide" or to the i3220/3225 evaluation board data sheet for specific layout examples.
5. On-chip thermal limiting circuitry will shut down the circuit at a junction temperature of approximately 150 °C. For optimal reliability, junction temperatures above 140 °C should be avoided.
The Dual ProSLIC® is a series of low-voltage CMOS devices that integrate both SLIC and codec functionality into a single IC to provide a complete dual-channel analog telephone interface in accordance with all relevant LSSGR, ITU, and ETSI specifications. The Si3220 includes internal ringing generation to eliminate centralized ringers and ringing relays, and the Si3225 supports centralized ringing for long loop and legacy applications. On-chip subscriber loop and audio testing allows remote diagnostics and fault detection with no external test equipment or relays. The Si3220 and Si3225 operate from a single 3.3 or 5 V supply and interface to standard PCM/SPI or GCI bus digital interfaces. The Si3200 linefeed interface IC performs all high-voltage functions and operates from a 3.3 V or 5 V supply as well as single or dual battery supplies up to 100 V. The Si3220 and Si3225 are available in a 64-pin thin quad flat package (TQFP), and the Si3200 is available in a thermally-enhanced 16-pin small outline (SOIC) package.