Features: 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS −200 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 0.5 0.37 A TA = 70 0.4 0.29 Pulsed Drain Current(10 s Pulse W...
Si3420DV: Features: 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS −200 V Gate-Source Voltage VGS ±20 Continuous Drain Curre...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | −200 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 0.5 | 0.37 | A |
| TA = 70 | 0.4 | 0.29 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | 1 | |||
| Avalanche Current | L = 0.1 mH | IAS | 1 | ||
| Single Avalanche Energy | EAS | 0.05 | mJ | ||
| Continuous Source Current (Diode Conduction)a | IS | 1 | 1 | A | |
| Maximum Power Dissipationa | TA = 25 | PD | 2.1 | 1.14 | W |
| TA = 70 | 1.34 | 0.73 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||