Si3430DV Selling Leads, Price trend, Si3430DV DataSheet download, circuit diagram from SeekIC.com

Features: · High-Efficiency PWM Optimized· 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 175)a TA = 25 ID 2.4 1.8 A TA = 85 1.7 1.3 Pulsed Dr...

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SeekIC No. : 004490126 Detail

Si3430DV: Features: · High-Efficiency PWM Optimized· 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20...

Si3430DV Data Sheet

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Part Number:: Si3430DV
Supply Ability:: 5000

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Upload time: 2025/12/26

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Product Details

Description

Features:

· High-Efficiency PWM Optimized
· 100% Rg Tested

Pinout

Connection Diagram

Specifications

Parameter		Symbol	5 secs	Steady State	Unit
Drain-Source Voltage		V_DS	100		V
Gate-Source Voltage		V_GS	±20
Continuous Drain Current (T_J= 175)^a	T_A = 25	I_D	2.4	1.8	A
	T_A = 85		1.7	1.3
Pulsed Drain Current		I_DM	8
Avalanche Current	L = 0.1 mH	I_AR	6
Repetitive Avalanche Energy (Duty Cycle1%)		E_AR	1.8		mJ
Continuous Source Current (Diode Conduction)^a		I_S	1.7	1.0	A
Maximum Power Dissipationa	T_A = 25	P_D	2.0	1.14	W
	T_A = 85		1.0	0.59
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150

Description

Si3430DV N-Channel 100-V (D-S) MOSFET

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Si3430DV

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