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Si3433BDV

Features: • P-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C Temperature Range• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristic...

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SeekIC No. : 004490128 Detail

Si3433BDV: Features: • P-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C ...

Si3433BDV Data Sheet

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Si3433BDV
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5000

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Upload time: 2025/12/26

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Product Details

Description



Features:

• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics


Description

The attached spice model Si3433BDV describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit odel is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.  he saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network Si3433BDV is used to model the gate charge characteristics while avoiding  onvergence difficulties of the switched Cgd model. All model parameter values Si3433BDV are optimized to provide a best fit to he measured electrical data and are not intended as an exact physical interpretation of the device.




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