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Si3434DV

Features: · TrenchFET® Power MOSFET· 2.5-V Rating for 30-V N-Channel· Low rDS(on) for Footprint AreaApplicationLi-lon Battery ProtectionPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 Continuous Dra...

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SeekIC No. : 004490130 Detail

Si3434DV: Features: · TrenchFET® Power MOSFET· 2.5-V Rating for 30-V N-Channel· Low rDS(on) for Footprint AreaApplicationLi-lon Battery ProtectionPinoutSpecifications Parameter Symbol 5 secs Stead...

Si3434DV Data Sheet

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Part Number:
Si3434DV
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· 2.5-V Rating for 30-V N-Channel
· Low rDS(on) for Footprint Area


Application

Li-lon Battery Protection


Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 6.1 4.6 A
TA = 70 4.9 3.6
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 1.7 1.0
Maximum Power Dissipationa TA = 25 PD 2.0 1.14 W
TA = 70 1.3 0.73
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150



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