Features: · TrenchFET® Power MOSFET· PWM Optimized for Fast Switching In Small Footprint· 100% Rg TestedApplicationPrimary Side Switch for Low Power DC/DC ConvertersPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 150 V Gate-Source Volta...
Si3440DV: Features: · TrenchFET® Power MOSFET· PWM Optimized for Fast Switching In Small Footprint· 100% Rg TestedApplicationPrimary Side Switch for Low Power DC/DC ConvertersPinoutSpecifications Par...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 150 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 175)a | TA = 25 | ID | 1.5 | 1.2 | A |
| TA = 85 | 1.1 | 0.8 | |||
| Pulsed Drain Current | IDM | 6 | |||
| Avalanche Current | L = 0.1 mH | IAR | 4 | ||
| Repetitive Avalanche Energy (Duty Cycle1%) | EAR | 0.8 | mJ | ||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | 1.0 | A | |
| Maximum Power Dissipationa | TA = 25 | PD | 2.0 | 1.14 | W |
| TA = 85 | 1.0 | 0.59 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||