Si3447BDV-T1

The Si3447BDV-T1 is designed as one kind of P-Channel 12-V (D-S) MOSFET that can be used in load switch and PA switch applications. This device also has two points of features:(1)TrenchFET Power MOSFET: 1.8-V Rated;(2)Ultra Low On-Resistance.

The absolute maximum ratings of the Si3447BDV-T1 can be summarized as:(1)Drain-Source Voltage: -12 V;(2)Gate-Source Voltage: +/- 8 V;(3)Continuous Drain Current (TJ = 150 ) TA = 25: -6.0 to -4.5 A;(4)Continuous Drain Current (TJ = 150 ) TA = 85: -4.3 to -3.3 A;(5)Pulsed Drain Current: -20 A;(6)Continuous Diode Current (Diode Conduction): -1.7 to -0.9 A;(7)Maximum Power Dissipation: 0.6 to 2.0 W;(8)Operating Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of Si3447BDV-T1 can be summarized as:(1)Gate Threshold Voltage: -0.45 to 1 V;(2)Gate-Body Leakage: +/- 100 nA;(3)Zero Gate Voltage Drain Current: -1 or -5 uA;(4)On-State Drain Current: -20 A;(5)Forward Transconductance: 15 s;(6)Diode Forward Voltage: -0.7 to -1.2 V;(7)Total Gate Charge: 9.3 to 14 nC;(8)Gate-Source Charge: 1.5 nC;(9)Gate-Drain Charge: 2.6 nC. If you want to know more information such as the electrical characteristics about the Si3447BDV-T1, please download the datasheet in www.seekic.com or www.chinaicmart.com.