SI3447DV

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : - 5.5 A
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.033 Ohms


Features:

• 5.5 A, 20 V. R_DS(ON) = 33 m @ V_GS = 4.5 V
                           R_DS(ON) = 43 m @ V_GS = 2.5 V
                           R_DS(ON) = 60 m @ V_GS = 1.8 V
• Fast switching speed.
• High performance trench technology for extremely low R_DS(ON)


Application

• Battery management
• Load switch
• Battery protection


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
	Gate-Source Voltage	±8	V
ID	Drain Current Continuous                        (Note 1a)                       Pulsed	-5.5	A
		-20
PD	Maximum Power Dissipation                         (Note 1a)                                                                      (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This P-Channel 1.8V specified MOSFET uses Fairchild's low voltage PowerTrench process. Si3447DV has been optimized for battery power management applications.