Features: TrenchFET®Power MOSFET100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current(TJ= 150 )a TA= 25 ID 4.5 3.4 A TA= 70 3....
Si3454ADV: Features: TrenchFET®Power MOSFET100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
5 secs |
Steady State |
Unit | |
Drain-Source Voltage |
VDS |
30 |
V | ||
Gate-Source Voltage |
VGS |
±20 | |||
Continuous Drain Current(TJ= 150 )a |
TA= 25 |
ID
|
4.5 |
3.4 |
A |
TA= 70 |
3.6 |
2.7 | |||
Pulsed Drain Current (10s Pulse Width) |
IDM |
20 | |||
Continuous Source Current (Diode Conduction)a |
IS |
1.7 |
1.0 | ||
Maximum Power Dissipationa | TA= 25 |
PD |
2.0 |
1.14 |
W |
TA= 70 |
1.3 |
0.73 | |||
Operating Junction and Storage Temperature Range |
TJ, Tstg |
−55 to 150 |