SI3454DV

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.065 Ohms
Configuration : Single Quad Drain
Package / Case : Super SOT-6
Continuous Drain Current : 4.2 A


Features:

• 4.2 A, 30 V. R_DS(ON) = 65 m @ V_GS = 10 V
                      R_DS(ON) = 95 m @ V_GS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (9.4 nC typical)
• High power and current handling capability


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)                       Pulsed	4.2	A
		20
PD	Maximum Power Dissipation (Note 1a)                                              (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

These N-Channel Logic Level MOSFETs Si3454DV are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Si3454DV is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.