SI3455DV

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.075 Ohms
Continuous Drain Current : - 3.6 A


Features:

• 3.6 A, 30 V. R_DS(ON) = 75 m @ V_GS = 10 V
                           R_DS(ON) = 125 m @ V_GS = 4.5 V
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)


Application

• Battery management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	SI3446DV	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Load Current Continuous (Note 1)	-3.6	A
	Drain Current - Pulsed	-10
PD	Maximum Power Dissipation (Note 1a)                                              (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. Si3455DV has been optimized for battery power management applications.