SI3456BDV-T1-E3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 35 mOhms
Configuration : Single Quad Drain
Package / Case : TSOP


Pinout




Description

The Si3456BDV-T1-E3 is one member of the Si3456BDV family which is designed as the N-channel 30-V (D-S) MOSFET that has two points of features:(1)TrenchFET Power MOSFET; (2)100% Rg tested.

The absolute maximum ratings of the Si3456BDV-T1-E3 can be summarized as:(1)Drain-Source Voltage:30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current (TJ = 150) TA = 25:4.5 to 6.0 A;(4)Continuous Drain Current (TJ = 150) TA = 75: 3.6 to 4.8 A;(5)Pulsed Drain Current: +/- 30 A;(6)Continuous Source Current (Diode Conduction): 0.9 to 1.7 A;(7)Maximum Power Dissipation:0.7 to 2.0 W;(8)Operating Junction and Storage Temperature Range:-55 to +150 .

The electrical characteristics of Si3456BDV-T1-E3 can be summarized as:(1)Gate Threshold Voltage: 1.0 to 3.0 V;(2)Gate-Body Leakage: +/- 100 nA;(3)Zero Gate Voltage Drain Current: 1 uA or 5 uA;(4)On-State Drain Current: 30 A;(5)Drain-Source On-State Resistance: 0.028 to 0.035 ;(6)Forward Transconductance: 12 s;(7)Diode Forward Voltage: 0.8 to 1.2 V. If you want to know more information such as the electrical characteristics about Si3456BDV-T1-E3, please download the datasheet in www.seekic.com or www.chinaicmart.com.