Features: · TrenchFET®Power MOSFET· 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 6.0 4.5 A TA = 70 4.8 3.6 Pulsed Drain ...
Si3456BDV: Features: · TrenchFET®Power MOSFET· 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 ...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 6.0 | 4.5 | A |
| TA = 70 | 4.8 | 3.6 | |||
| Pulsed Drain Current | IDM | ±30 | |||
| Continuous Source Current (Diode Conduction)a | IS | 1.7 | 0.9 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.0 | 1.1 | W |
| TA = 70 | 1.3 | 0.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||