Si3456BDV

Features: · TrenchFET®Power MOSFET· 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA = 25 ID 6.0 4.5 A TA = 70 4.8 3.6 Pulsed Drain ...

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Si3456BDV Picture
SeekIC No. : 004490147 Detail

Si3456BDV: Features: · TrenchFET®Power MOSFET· 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 ...

floor Price/Ceiling Price

Part Number:
Si3456BDV
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

· TrenchFET®Power MOSFET
· 100% Rg Tested



Pinout

  Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 6.0 4.5 A
TA = 70 4.8 3.6
Pulsed Drain Current IDM ±30
Continuous Source Current (Diode Conduction)a IS 1.7 0.9
Maximum Power Dissipationa TA = 25 PD 2.0 1.1 W
TA = 70 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150



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