SI3456DV

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain
Package / Case : SSOT-6
Continuous Drain Current : 5.1 A
Resistance Drain-Source RDS (on) : 33 m Ohms


Features:

· 5.1 A, 30 V. R_DS(ON) = 45 m @ V_GS = 10 V
                       R_DS(ON) = 65 m @ V_GS = 4.5 V
· High performance trench technology for extremely low RDS(ON)
· Low gate charge
· High power and current handling capability


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous (Note 1a)                        Pulsed	5.1	A
		20
PD	Maximum Power Dissipation (Note 1a)                                               (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process, Si3456DV has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Si3456DV is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.