SI3457DV

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Continuous Drain Current : - 4 A
Configuration : Single Quad Drain
Package / Case : SSOT-6
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.05 Ohms


Features:

• 4 A, 30 V. R_DS(ON) = 50 m @ V_GS = 10 V
                        R_DS(ON) = 75 m @ V_GS = 4.5 V
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)


Application

• Battery management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	SI3446DV	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±25	V
ID	Load Current Continuous (Note 1)	-4	A
	Drain Current - Pulsed	-20
PD	Maximum Power Dissipation (Note 1a)                                              (Note 1b)	1.6	W
		0.8
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150	°C

Description

This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. Si3457DV has been optimized for battery power management applications.

Parameters:

Technical/Catalog Information	SI3457DV
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	470pF @ 15V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	8.1nC @ 5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SI3457DV SI3457DV