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Features: · TrenchFET® Power MOSFET· 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150)a TA = 25 ID 6.8 5.1 A TA = 70 5.4 4.1 Pulsed Drain ...

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SeekIC No. : 004490156 Detail

Si3460DV: Features: · TrenchFET® Power MOSFET· 100% Rg TestedPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 ...

Si3460DV Data Sheet

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Part Number:: Si3460DV
Supply Ability:: 5000

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Upload time: 2025/12/27

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Product Details

Description

Features:

· TrenchFET^® Power MOSFET
· 100% Rg Tested

Pinout

Connection Diagram

Specifications

Parameter		Symbol	5 secs	Steady State	Unit
Drain-Source Voltage		V_DS	20		V
Gate-Source Voltage		V_GS	±8
Continuous Drain Current (T_J = 150)^a	T_A = 25	I_D	6.8	5.1	A
	T_A= 70		5.4	4.1
Pulsed Drain Current		I_DM	20
Continuous Source Current (Diode Conduction)a		I_S	1.7	0.9
Maximum Power Dissipation^a	T_A = 25	P_D	2.0	1.1	W
	T_A= 70		1.3	0.73
Operating Junction and Storage Temperature Range		T_J, T_stg	−55 to 150

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Si3460DV

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