Si3464DV

The Si3464DV is designed as one kind of N-Channel 20-V (D-S) MOSFET device, Si3464DV has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested; (4)Compliant to RoHS Directive 2002/95/EC. Also Si3464DV can be used in wide range of applications such as (1)DC/DC converters; (2)load switch for portable.

The absolute maximum ratings of the Si3464DV can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 8 V;(3)Continuous Drain Current (TJ = 150 °C): 8.0 to 6.0 A;(4)Pulsed Drain Current: 20 A;(5)Continuous Source-Drain Diode Current: 3 to 1.7 A;(6)Maximum Power Dissipation: 3.6 W or 1.3 W;(7)Operating Junction and Storage Temperature Range: -55 to 150 °C;(8)Soldering Recommendations (Peak Temperature): 260 °C.

The electrical characteristics of the Si3464DV can be summarized as:(1)Gate Threshold Voltage: 0.45 to 1.0 V;(2)Drain-Source Breakdown Voltage: 20 V;(3)Zero Gate Voltage Drain Current: 1 or 10 uA;(4)On-State Drain Current: 20 A;(5)Drain-Source On-State Resistance: 0.020 to 0.024 ;(6)Forward Transconductance: 17 S. If you want to know more information about the Si3464DV, please download the datasheet in www.seekic.com or www.chinaicmart.com .