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Si3585DV

PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID 2.4 2.0 -1.8 -1.5 A TA = 70 1.7 1.4 -1.3...

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SeekIC No. : 004490171 Detail

Si3585DV: PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 C...

Si3585DV Data Sheet

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Part Number:
Si3585DV
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



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Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
10 secs Steady State 10 secs Steady State
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 2.4 2.0 -1.8 -1.5 A
TA = 70 1.7 1.4 -1.3 -1.2
Continuous Source Current (Diode Conduction)a IS 1.05 0.75 -1.05 -0.75
Pulsed Drain Current IDM 8 -7
Maximum Power Dissipationa TA = 25 PD 1.15 0.83 1.15 0.83 W
TA = 70 0.59 0.53 0.59 0.53
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

Si3585DV N- and P-Channel 20-V (D-S) MOSFET




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