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Si3586DV

Features: · TrenchFET® Power MOSFET· Fast Switching In Small Footprint· Very Low rDS(on) for Increased EfficiencyApplicationLoad Switch for Portable DevicesPinoutSpecifications Parameter Symbol N-Channel P-Channel Unit 5 secs Steady State 5 secs Steady State Drain-Source Volt...

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SeekIC No. : 004490172 Detail

Si3586DV: Features: · TrenchFET® Power MOSFET· Fast Switching In Small Footprint· Very Low rDS(on) for Increased EfficiencyApplicationLoad Switch for Portable DevicesPinoutSpecifications Parameter S...

Si3586DV Data Sheet

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Part Number:
Si3586DV
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

· TrenchFET® Power MOSFET
· Fast Switching In Small Footprint
· Very Low rDS(on) for Increased Efficiency




Application

Load Switch for Portable Devices




Pinout

Connection Diagram




Specifications

Parameter Symbol N-Channel P-Channel Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150)a TA = 25 ID 3.4 2.9 -2.5 -2.1 A
TA = 70 2.7 2.3 -2.0 -1.7
Continuous Source Current (Diode Conduction)a IS 1.05 0.75 -1.05 -0.75
Pulsed Drain Current IDM ±8 -7
Maximum Power Dissipationa TA = 25 PD 1.15 0.83 1.15 0.83 W
TA = 70 0.73 0.53 0.73 0.53
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

Si3586DV N- and P-Channel 20-V (D-S) MOSFET




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