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Si3850DV

PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current (TJ = 150) TA = 25 ID ±1.2 ±0.85 A TA = 70 ±0.95 ±0.65 Pulsed Drain Current IDM ±3.5 ±2.5 Continuous...

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Si3850DV: PinoutSpecifications Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current (TJ = 150) TA = 25...

Si3850DV Data Sheet

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Part Number:
Si3850DV
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



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Connection Diagram


Specifications

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS ±12 ±12
Continuous Drain Current (TJ = 150) TA = 25 ID ±1.2 ±0.85 A
TA = 70 ±0.95 ±0.65
Pulsed Drain Current IDM ±3.5 ±2.5
Continuous Source Current (Diode Conduction) IS 1 -1
Maximum Power Dissipation
Surface Mounted on Board)		 TA = 25 PD 1.25 W
TA = 70 0.8
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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