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Si3853DV

PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage(MOSFET and Schottky) VDS -20 V Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage(MOSFET) VGS ±12 Continuous Drain Current (TJ = 150) (MOSFET)a TA = 25 ID ±1.8 ±1.6 A TA = 70 ...

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Si3853DV: PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage(MOSFET and Schottky) VDS -20 V Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage(MOSFET...

Si3853DV Data Sheet

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Part Number:
Si3853DV
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage(MOSFET and Schottky) VDS -20 V
Reverse Voltage (Schottky) VKA 20
Gate-Source Voltage(MOSFET) VGS ±12
Continuous Drain Current (TJ = 150) (MOSFET)a TA = 25 ID ±1.8 ±1.6 A
TA = 70 ±1.5 ±1.2
Pulsed Drain Current(MOSFET) IDM ±7
Continuous Source Current (MOSFET Diode Conduction)a IS -1.05 -0.75
Average Foward Current (Schottky) IF 0.5
Pulsed Foward Current (Schottky) IFM 7
Maximum Power Dissipation (MOSFET)a TA = 25 PD 1.15 0.83 W
TA = 70 0.73 0.53
Maximum Power Dissipation (Schottky)a TA = 25 1.0 0.76
TA = 70 0.64 0.48
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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