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Si3900DV

PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID 2.4 2.0 A TA = 85 1.7 1.4 Pulsed Drain Current(10 s Pulse Width) IDM 8 Continuous Source...

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Si3900DV: PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150)a TA = 25 ID 2.4...

Si3900DV Data Sheet

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Part Number:
Si3900DV
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Connection Diagram




Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 2.4 2.0 A
TA = 85 1.7 1.4
Pulsed Drain Current(10 s Pulse Width) IDM 8
Continuous Source Current (Diode Conduction)a IS 1.05 0.75 A
Maximum Power Dissipationa TA = 25 PD 1.15 0.83 W
TA = 85 0.59 0.53
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

Si3900DV Dual N-Channel 20-V (D-S) MOSFET




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