Si4123G

` Dual-Band RF Synthesizers
` RF1: 900 MHz to 1.8 GHz
` RF2: 750 MHz to 1.5 GHz
` IF Synthesizer
` IF: 500 MHz to 1000 MHz
` Integrated VCOs, Loop Filters,Varactors, and Resonators
` Minimal External Components Required
` Fast Settling Time: 140 s
` Low Phase Noise
` Programmable Power Down Modes
` 1 A Standby Current
` 18 mA Typical Supply Current
` 2.7 V to 3.6 V Operation
` Packages: 24-Pin TSSOP and 28-Pin MLP

Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of this device should only be done at ESD-protected workstations.
3. For signals SCLK, SDATA, SENB, PWDNB and XIN.

The Si4133G is a monolithic integrated circuit that performs both IF and dual-band RF synthesis for GSM and GPRS wireless communications applications. The Si4133G includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and power down settings are programmable through a three-wire serial interface.