Features: · TrenchFET® Gen II· Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET TechnologyApplication· Synchronous Buck Low-Side- Notebook- Server- Workstation· Synchronous Rectifier-POLPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Vo...
Si4320DY: Features: · TrenchFET® Gen II· Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET TechnologyApplication· Synchronous Buck Low-Side- Notebook- Server- Workstation· Synchronous Rect...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 25 | 17 | A |
| TA = 70 | 20 | 13 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | 70 | |||
| Continuous Source Current (Diode Conduction)a | IS | 2.9 | 1.3 | ||
| Avalanche Current | IAS | 50 | |||
| Maximum Power Dissipationa | TA = 25 | PD | 3.5 | 1.6 | W |
| TA = 70 | 2.2 | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||