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SI4362DY

MOSFET 30V 20A 3.5W

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SeekIC No. : 00164779 Detail

SI4362DY: MOSFET 30V 20A 3.5W

SI4362DY Data Sheet

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Part Number:
SI4362DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 4.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 20 A
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 4.5 mOhms


Features:

` TrenchFET®Power MOSFET
` Optimized for "Low Side" Synchronous Rectifier Operation
` 100% Rg Tested


Application

· DC/DC Converters
· Synchronous Rectifiers


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 20 A
TA = 70 15
Continuous Diode Current (Diode Conduction)a IS 2.9
Pulsed Drain Current(10 s Pulse Width) IDM 60
Maximum Power Dissipationa TA = 25 PD 3.5 W
TA = 70 2.2
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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