Features: ` TrenchFET® Power MOSFET` Optimized for Low Side Synchronous Rectifier Operation` 100% RG TestedApplication· DC/DC Converters· Synchronous RectifiersPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage ...
Si4364DY: Features: ` TrenchFET® Power MOSFET` Optimized for Low Side Synchronous Rectifier Operation` 100% RG TestedApplication· DC/DC Converters· Synchronous RectifiersPinoutSpecifications Parame...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±16 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 20 | 13 | A |
| TA = 70 | 15 | 10 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | 60 | |||
| Continuous Source Current (Diode Conduction)a | IS | 2.9 | 1.3 | A | |
| Maximum Power Dissipationa | TA = 25 | PD | 3.5 | 1.6 | W |
| TA = 70 | 2.2 | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||