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Si4368DY

Features: · Extremely Low Qgd WFET Technology for Switching Losses Improvement· TrenchFET® Gen II Power MOSFET· 100% Rg TestedApplication· Low-Side DC/DC Conversion− Notebook, Server, VRM Module· Fixed TelecomPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drai...

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SeekIC No. : 004490255 Detail

Si4368DY: Features: · Extremely Low Qgd WFET Technology for Switching Losses Improvement· TrenchFET® Gen II Power MOSFET· 100% Rg TestedApplication· Low-Side DC/DC Conversion− Notebook, Server, VRM ...

Si4368DY Data Sheet

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Part Number:
Si4368DY
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

· Extremely Low Qgd WFET Technology for Switching Losses Improvement
· TrenchFET® Gen II Power MOSFET
· 100% Rg Tested


Application

· Low-Side DC/DC Conversion
− Notebook, Server, VRM Module
· Fixed Telecom


Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 25 17 A
TA = 70 20 13
Pulsed Drain Current(10 s Pulse Width) IDM 70
Continuous Source Current (Diode Conduction)a IS 2.9 1.3 A
Maximum Power Dissipationa TA = 25 PD 3.5 1.6 W
TA = 70 2.2 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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