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Si4390DY

Features: · Extremely Low Qgd WFET Technology for Switching Losses· TrenchFET® Power MOSFETApplicationHigh-Side DC/DC Conversion- Notebook- ServerPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 Cont...

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SeekIC No. : 004490260 Detail

Si4390DY: Features: · Extremely Low Qgd WFET Technology for Switching Losses· TrenchFET® Power MOSFETApplicationHigh-Side DC/DC Conversion- Notebook- ServerPinoutSpecifications Parameter Symbol 5 s...

Si4390DY Data Sheet

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Part Number:
Si4390DY
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

· Extremely Low Qgd WFET Technology for Switching Losses
· TrenchFET® Power MOSFET


Application

High-Side DC/DC Conversion
- Notebook
- Server


Pinout

Connection Diagram


Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 12.5 8.5 A
TA = 70 10 6.8
Pulsed Drain Current(10 s Pulse Width) IDM 20
Continuous Source Current (Diode Conduction)a IS 2.7 1.3 A
Maximum Power Dissipationa TA = 25 PD 3.0 1.4 W
TA = 70 1.9 0.9
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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