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Si4392DY

Features: ·Extremely Low Qgd WFET Technology for Switching Losses·TrenchFET® Power MOSFET·100% Rg TestedApplication·High-Side DC/DC Conversion − Notebook − ServerPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage ...

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SeekIC No. : 004490261 Detail

Si4392DY: Features: ·Extremely Low Qgd WFET Technology for Switching Losses·TrenchFET® Power MOSFET·100% Rg TestedApplication·High-Side DC/DC Conversion − Notebook − ServerPinoutSpecifications...

Si4392DY Data Sheet

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Part Number:
Si4392DY
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

·Extremely Low Qgd WFET Technology for Switching Losses
·TrenchFET® Power MOSFET
·100% Rg Tested


Application

·High-Side DC/DC Conversion
  − Notebook
  − Server


Pinout

Connection Diagram


Specifications

Parameter
Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 12.5 A
TA = 70 10
Pulsed Drain Current IDM 50
continuous Source Current (Diode Conduction)a IS 2.7
Maximum Power Dissipationa TA = 25 PD 3.0 W
TA = 70 1.9
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150



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