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Si4394DY

Features: ·Extremely Low Qgd WFET™ Technology for Switching Losses·TrenchFET® Power MOSFET·100% Rg TestedApplication· High-Side DC/DC Conversion − Notebook − Server·Synchronous RectificationPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-S...

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SeekIC No. : 004490262 Detail

Si4394DY: Features: ·Extremely Low Qgd WFET™ Technology for Switching Losses·TrenchFET® Power MOSFET·100% Rg TestedApplication· High-Side DC/DC Conversion − Notebook − Server·Synchronous...

Si4394DY Data Sheet

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Part Number:
Si4394DY
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

·Extremely Low Qgd WFET™ Technology for Switching Losses
·TrenchFET® Power MOSFET
·100% Rg Tested


Application

· High-Side DC/DC Conversion
  − Notebook
  − Server
·Synchronous Rectification


Pinout

Connection Diagram




Specifications

Parameter
Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25 ID 15 10 A
TA = 70 12 8
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction)a IS 2.7 1.3
Avalanch Current L = 0.1 mH iAS 45
Maximum Power Dissipationa TA = 25 PD 2.7 1.4 W
TA = 70 1.9 0.9
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150



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