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SI4401DY

MOSFET 40V 10.5A 3W

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SeekIC No. : 00166509 Detail

SI4401DY: MOSFET 40V 10.5A 3W

SI4401DY Data Sheet

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Part Number:
SI4401DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.7 A
Resistance Drain-Source RDS (on) : 15.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 40 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 8.7 A
Resistance Drain-Source RDS (on) : 15.5 mOhms


Pinout

Connection Diagram


Specifications

</T
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID -10.5 -8.7 A
TA = 70°C -8.3 -5.9
Pulsed Drain Current(10 s Pulse Width) IDM -50
Continuous Source Current (Diode Conduction)a IS -2.7 -1.36 A
Maximum Power Dissipationa TA = 25°C PD 3.0 1.5 W
TA = 70°C 1.9 0.95
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C



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