Features: `TrenchFET® Power MOSFET`Optimized for Low Side Synchronous Rectifier Operation`100% RG TestedApplication·DC/DC Converters·Synchronous RectifiersPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V...
Si4406DY: Features: `TrenchFET® Power MOSFET`Optimized for Low Side Synchronous Rectifier Operation`100% RG TestedApplication·DC/DC Converters·Synchronous RectifiersPinoutSpecifications Parameter...
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Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 20 | 13 | A |
| TA = 70 | 15 | 10 | |||
| Pulsed Drain Current | IDM | 60 | |||
| continuous Source Current (Diode Conduction)a | IS | 2.9 | 1.3 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.5 | 1.6 | W |
| TA = 70 | 2.2 | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | |||