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Si4410DY*

Features: · 10 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 V RDS(ON) = 0.020 W @ VGS = 4.5 V· Low gate charge.· Fast switching speed.· High performance trench technology for extremely low RDS(ON).· High power and current handling capability.Application· Battery switch· Load switch· Motor controlsSpecif...

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Si4410DY*: Features: · 10 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 V RDS(ON) = 0.020 W @ VGS = 4.5 V· Low gate charge.· Fast switching speed.· High performance trench technology for extremely low RDS(ON).· High ...

Si4410DY* Data Sheet

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Part Number:
Si4410DY*
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 10 A, 30 V. RDS(ON) = 0.0135 W @ VGS = 10 V
   RDS(ON) = 0.020 W @ VGS = 4.5 V
· Low gate charge.
· Fast switching speed.
· High performance trench technology for extremely
  low RDS(ON).
· High power and current handling capability.


Application

· Battery switch
· Load switch
· Motor controls


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a)
- Pulsed		 10 A
50
PD Power Dissipation for Single Operation (Note 1a
(Note 1b)
(Note 1c)		 2.5 W
1.2
1
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C



Description

This N-Channel Logic Level MOSFET Si4410DY* is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Si4410DY* is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




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