Features: · TrenchFET® Power MOSFET· Advanced High Cell Density ProcessApplication· Load Switches - Notebook PCs - Desktop PCsPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 Continuous Drain Curre...
Si4425BDY: Features: · TrenchFET® Power MOSFET· Advanced High Cell Density ProcessApplication· Load Switches - Notebook PCs - Desktop PCsPinoutSpecifications Parameter Symbol 10 secs Steady State ...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -30 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 |
ID |
-11.4 | -8.8 | A |
| TA = 70 | -9.1 | -7.0 | |||
| Pulsed Drain Current | IDM | -50 | |||
| Continuous Source Current (Diode Conduction)a | IS | -2.1 | -1.3 | ||
| Maximum Power Dissipationaa | TA = 25 | PD | 2.5 | 1.5 | W |
| TA = 70 | 1.6 | 0.9 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | |||