SI4425DY

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : - 11 A


Features:

· -11 A, -30 V. RDS(ON) = 0.014 W@ VGS = -10 V,
· RDS(ON) = 0.020 W@ VGS = -4.5 V.
· Low gate charge (30nC typical).
· High performance trench technology for extremely low
· RDS(ON).
· High power and current handling capability.


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	7	A
		30
PD	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	50	°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	25	°C/W

 

Description

This P-Channel Logic Level MOSFET Si4425DY is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Si4425DY is well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.