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SI4427DY

MOSFET 30V 13.3A 3W

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SeekIC No. : 00165795 Detail

SI4427DY: MOSFET 30V 13.3A 3W

SI4427DY Data Sheet

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Part Number:
SI4427DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 9.4 A
Resistance Drain-Source RDS (on) : 10.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 9.4 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 10.5 mOhms


Pinout

Connection Diagram


Specifications

</T
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID -13.3 -9.4 A
TA = 70°C -10.7 -7.5
Pulsed Drain Current(10 s Pulse Width) IDM -50
Continuous Source Current (Diode Conduction)a IS -2.7 -1.3 A
Maximum Power Dissipationa TA = 25°C PD 3.0 1.5 W
TA = 70°C 1.9 0.95
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C



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