SI4431DY

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : - 30 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.032 Ohms
Continuous Drain Current : - 6.3 A


Features:

• 6.3 A, 30 V. RDS(ON) = 0.032 @ VGS = -10 V
  RDS(ON) = 0.05 @ VGS = -4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
  low RDS(ON)
• High power and current handling capability


Application

• DC/DC converter
• Load switch
• Motor Drive


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-6.3	A
		-40
PD	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This P-Channel Logic Level MOSFET Si4431DY is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Si4431DY is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.