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SI4433DY

MOSFET 20V 3.9A 2.5W

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SeekIC No. : 00164829 Detail

SI4433DY: MOSFET 20V 3.9A 2.5W

SI4433DY Data Sheet

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Part Number:
SI4433DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.9 A
Resistance Drain-Source RDS (on) : 110 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.9 A
Resistance Drain-Source RDS (on) : 110 mOhms


Features:

· TrenchFET Power MOSFET
· Fast Switching


Application

· DC-DC Conversion
· Asynchronous Buck Converter
· Voltage Inverter


Pinout

Connection Diagram


Specifications

</TA
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID -3.9 -2.9 A
TA = 85°C -2.8 -2.1
Pulsed Drain Current(10 s Pulse Width) IDM -10
Continuous Source Current (Diode Conduction)a IS -2.1 -1.2 A
Maximum Power Dissipationa TA = 25°C PD 2.5 1.4 W
TA = 85°C 1.6 0.7
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C



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