MOSFET 30V 11.4A 5.0W 24mohm @ 10V
Si4435DDY-T1-E3: MOSFET 30V 11.4A 5.0W 24mohm @ 10V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 8.1 A | ||
Resistance Drain-Source RDS (on) : | 24 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |