SI4450DY

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.02 Ohms


Features:

• 8 A, 60 V. RDS(on) = 0.020 @ VGS = 10 V
  RDS(on) = 0.025 @ VGS = 6 V.
• Low gate charge (30nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.


Application

• DC/DC converter
• Load switch
• Motor drives


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	60	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	8	A
		50
PD	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This N-Channel MOSFET of the Si4450DY is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.