Si4462DY

Features: · TrenchFET Power MOSFET· PWM Optimized for Fast SwitchingApplicationPrimary Side SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 1...

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SeekIC No. : 004490299 Detail

Si4462DY: Features: · TrenchFET Power MOSFET· PWM Optimized for Fast SwitchingApplicationPrimary Side SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS...

floor Price/Ceiling Price

Part Number:
Si4462DY
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

· TrenchFET Power MOSFET
· PWM Optimized for Fast Switching





Application

Primary Side Switch




Pinout

  Connection Diagram




Specifications

Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 17 12 A
TA = 70°C 14 9
Pulsed Drain Current IDM ±50
Single Avalanch Current L = 0.1 mH IAS 1.5
Single Avalanch Energy EAS 0.11 mJ
Continuous Source Current (Diode Conduction)a IS 2.7 1.4 A
Maximum Power Dissipationa TA = 25°C PD 3.0 1.6 W
TA = 70°C 2.0 1.0
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C





Description

N-Channel 200-V (D-S) MOSFET Si4462DY




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