Features: · TrenchFET Power MOSFET· PWM Optimized for Fast SwitchingApplicationPrimary Side SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 Continuous Drain Current (TJ = 150°C)a TA = 25°C ID 1...
Si4462DY: Features: · TrenchFET Power MOSFET· PWM Optimized for Fast SwitchingApplicationPrimary Side SwitchPinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS...
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| Parameter | Symbol | 5 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 30 | V | ||
| Gate-Source Voltage | VGS | ±12 | |||
| Continuous Drain Current (TJ = 150°C)a | TA = 25°C | ID | 17 | 12 | A |
| TA = 70°C | 14 | 9 | |||
| Pulsed Drain Current | IDM | ±50 | |||
| Single Avalanch Current | L = 0.1 mH | IAS | 1.5 | ||
| Single Avalanch Energy | EAS | 0.11 | mJ | ||
| Continuous Source Current (Diode Conduction)a | IS | 2.7 | 1.4 | A | |
| Maximum Power Dissipationa | TA = 25°C | PD | 3.0 | 1.6 | W |
| TA = 70°C | 2.0 | 1.0 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 150 | °C | ||