SI4463DY

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : - 11.5 A
Resistance Drain-Source RDS (on) : 10 m Ohms


Features:

• 11.5 A, 20 V. R _DS(ON) = 12 m @ V_GS = 4.5 V
                             R _DS(ON) = 17.5 m @ V_GS = 2.5 V
• Fast switching speed.
• High performance trench technology for extremely low R _DS(ON)
• High power and current handling capability


Application

• Power management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-11.5	A
		-50
PD	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	2.5	W
		1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

Description

This P-Channel 2.5V specified MOSFET of the Si4463DY uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).