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Si4464DY

Features: ·TrenchFET® Power MOSFET·PWM Optimized for (Lowest Qg and Low RG)Application·Primary Side SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 Continuous Drain Current (TJ = 150)a TA =...

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SeekIC No. : 004490301 Detail

Si4464DY: Features: ·TrenchFET® Power MOSFET·PWM Optimized for (Lowest Qg and Low RG)Application·Primary Side SwitchPinoutSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source...

Si4464DY Data Sheet

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Part Number:
Si4464DY
Supply Ability:
5000

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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

·TrenchFET® Power MOSFET
·PWM Optimized for (Lowest Qg and Low RG)




Application

·Primary Side Switch




Pinout

Connection Diagram




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25

ID

 2.2 1.7 A
TA = 70 1.7 1.3
Pulsed Drain Current IDM 8
Single Avalanch Current L = 0.1 mH IAS 3
Single Avalanch Energy EAS 0.45 mJ
Continuous Source Current (Diode Conduction)a IS 2.1 1.2 A
Maximum Power Dissipationaa TA = 25 PD 2.5 1.5 W
TA = 70 1.6 0.9
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150





Description

N-Channel 200-V (D-S) MOSFET Si4464DY




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