SI4467DY

Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 6.7 m Ohms
Continuous Drain Current : - 13.5 A


Features:

• 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V
  RDS(ON) = 10.5 m @ VGS = 2.5 V
  RDS(ON) = 14 m @ VGS = 1.8 V
• Fast switching speed
• High performance trench technology for extremely
  low RDS(ON)
• High current and power handling capability


Application

• Power management
• Load switch
• Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	-13.5	A
		-50
PD	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	2.5	W
		1.5
		1.2
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +175	°C

Description

This P-Channel 1.8V specified MOSFET of the Si4467DY is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V 8V).