SI4470EY

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 11 mOhms


Features:

· TrenchFET® Power MOSFETS
· Extended Temperature Range




Application

· Primary Side Switch




Pinout






Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		VDS	60		V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 150)a	TA = 25	ID	12.7	9.0	A
	TA = 70		10.6	7.5
Pulsed Drain Current		IDM	50
Avalanch Current	L = 0.1 mH	IAS	50
Continuous Source Current (Diode Conduction)a		IS	3.1	1.5
Maximum Power Dissipationaa	TA = 25	PD	3.75	1.85	W
	TA = 70		2.6	1.3
Operating Junction and Storage Temperature Range		TJ, Tstg	55 to 175

Description

N-Channel 60-V (D-S) MOSFET Si4470EY